Band alignment at electrode-organic interfaces

M. G. Helander; Z. B. Wang; M. T. Greiner; J. Qiu; Z. H. Lu

doi:10.1117/12.826671

27 August 2009 Band alignment at electrode-organic interfaces

M. G. Helander, Z. B. Wang, M. T. Greiner, J. Qiu, Z. H. Lu

Proceedings Volume 7415, Organic Light Emitting Materials and Devices XIII; 74151U (2009) https://doi.org/10.1117/12.826671
Event: SPIE Photonic Devices + Applications, 2009, San Diego, California, United States

Abstract

The band alignment at metal-organic interfaces has been extensively studied; however the electrodes in real devices often consist of metals modified with dielectric buffer layers. We demonstrate that interface dipole theory, originally developed to describe Schottky contacts at metal-semiconductor interfaces, can also accurately describe the injection barriers in real organic electronic devices (i.e, at electrode-organic interface). It is found that theoretically predicted hole injection barriers for various archetype metal-organic and metal-dielectric-organic structures are in excellent agreement with values extracted from experimental measurements.

Citation Download Citation

M. G. Helander, Z. B. Wang, M. T. Greiner, J. Qiu, and Z. H. Lu "Band alignment at electrode-organic interfaces", Proc. SPIE 7415, Organic Light Emitting Materials and Devices XIII, 74151U (27 August 2009); https://doi.org/10.1117/12.826671

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