Optical properties of the modulation doped InGaAs/InAlAs quantum well

Chung-Chih Chang; Ming-Seng Hsu; Yueh Ouyang; Yau-Chyr Wang

doi:10.1117/12.825660

24 August 2009 Optical properties of the modulation doped InGaAs/InAlAs quantum well

Chung-Chih Chang, Ming-Seng Hsu, Yueh Ouyang, Yau-Chyr Wang

Proceedings Volume 7420, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications III; 74200S (2009) https://doi.org/10.1117/12.825660
Event: SPIE Photonic Devices + Applications, 2009, San Diego, California, United States

Abstract

Optical responses of a modulation doped lattice-matched InGaAs/InAlAs single quantum well structure grown by gas source molecular beam epitaxy were characterized by photoreflectance PR at various temperatures and depths. Two features corresponding to the ground state transition coming from the SQW and the band gap transition generated from the buffer layer are observed in the PR spectra and agree with those calculated theoretically. The optical transitions were perturbed by the energy shifts of the electronic states due to Stark effect induced by the doped result. The values of the Varshni coefficients of InGaAs/InAlAs were obtained from the relation between the exciton transition energy and the temperature. The built-in electric field could be determined and located from a series of PR spectra by sequential etching processes. The results suggest that a built-in electric field exists at the buffer/substrate interface.

Citation Download Citation

Chung-Chih Chang, Ming-Seng Hsu, Yueh Ouyang, and Yau-Chyr Wang "Optical properties of the modulation doped InGaAs/InAlAs quantum well", Proc. SPIE 7420, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications III, 74200S (24 August 2009); https://doi.org/10.1117/12.825660

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