Paper
17 May 2010 Phase locked harmonic localization and enhancement in an absorbing semiconductor cavity
V. Roppo, C. Cojocaru, G. D'Aguanno, F. Raineri, J. Trull, Y. Halioua, R. Vilaseca, R. Raj, M. Scalora
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Abstract
We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and UV ranges.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Roppo, C. Cojocaru, G. D'Aguanno, F. Raineri, J. Trull, Y. Halioua, R. Vilaseca, R. Raj, and M. Scalora "Phase locked harmonic localization and enhancement in an absorbing semiconductor cavity", Proc. SPIE 7469, ROMOPTO 2009: Ninth Conference on Optics: Micro- to Nanophotonics II, 74690F (17 May 2010); https://doi.org/10.1117/12.867543
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KEYWORDS
Gallium arsenide

Mirrors

Absorption

Second-harmonic generation

Harmonic generation

Semiconductors

Gold

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