Experimental scheme for observation of anomalous Kossel effect in semiconductor crystals

Pavel G Medvedev; Mikhail A. Chuev; Mikhail V. Kovalchuk; Elhan M. Pashaev; Ilia A. Subbotin; Sergey N. Yakunin

doi:10.1117/12.854221

26 February 2010 Experimental scheme for observation of anomalous Kossel effect in semiconductor crystals

Pavel G Medvedev, Mikhail A. Chuev, Mikhail V. Kovalchuk, Elhan M. Pashaev, Ilia A. Subbotin, Sergey N. Yakunin

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752115 (2010) https://doi.org/10.1117/12.854221
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

A theoretical analysis of the experimental scheme geometry for the anomalous Kossel effect observation is performed. Fluorescence radiation from germanium is induced by characteristic MoK_α radiation incident on the crystal at a small angle close to the specular reflection angle. First experimental results on observation of anomalous Kossel lines from the germanium crystal are presented.

Citation Download Citation

Pavel G Medvedev, Mikhail A. Chuev, Mikhail V. Kovalchuk, Elhan M. Pashaev, Ilia A. Subbotin, and Sergey N. Yakunin "Experimental scheme for observation of anomalous Kossel effect in semiconductor crystals", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752115 (26 February 2010); https://doi.org/10.1117/12.854221

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