Study of the molecular contaminants deposition on Cr, MoSi and SiO[sub]2[/sub] surfaces representative of photomasks layers

Hervé Fontaine; Sylviane Cetre; Gaël Demenet; Fabien Piallat

doi:10.1117/12.863877

15 May 2010 Study of the molecular contaminants deposition on Cr, MoSi and SiO₂ surfaces representative of photomasks layers

Hervé Fontaine, Sylviane Cetre, Gaël Demenet, Fabien Piallat

Author Affiliations +

Proceedings Volume 7545, 26th European Mask and Lithography Conference; 75450I (2010) https://doi.org/10.1117/12.863877
Event: 26th European Mask and Lithography Conference, 2010, Grenoble, France

Abstract

We investigated the deposition of the molecular contaminants on Cr, MoSi and quartz photomask surfaces by means of representative Cr, MoSi and SiO₂ layers deposited on wafers using TD-GCMS for the organics and LPE-IC for the SO₂ analysis. Mask-like layers were exposed to organic contaminants outgassed by three different types of mask pods during storage steps and Cr films were put in SO₂ controlled contaminated atmosphere. Organic species contaminating the different mask surfaces were identified depending on time. A rapid contamination kinetic was highlighted. Results have shown that low volatile organic compounds have higher deposition rates and that few specific molecules (such as caprolactam ; acrylic acid, dodecyl ester, butyldiglycol...) contribute in very significant levels (few E+13 atC/cm²). It also appeared that organics present a higher affinity for quartz and MoSi layers than for Cr surfaces but also that some compounds can have a specific affinity depending on the surface. These affinity differences have been quantified through the calculation of the contaminants sticking coefficients. Regarding the SO₂ deposition, Cr surfaces have showed a strong ability to be polluted in clean room conditions, up to a saturation level just higher than 1E+14 SO₂/cm². The kinetic is rapid and in good agreement with a Langmuir-type adsorption model allowing the determination of the deposition kinetic constant. Furthermore, it was showed a significant enhancement of SO₂ deposition with air humidity. Finally, this work contributes to a better knowledge of the molecular contaminants deposition behavior on mask surfaces providing relevant data to control the photomask contamination in order to prevent crystal growth issues.

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Hervé Fontaine, Sylviane Cetre, Gaël Demenet, and Fabien Piallat "Study of the molecular contaminants deposition on Cr, MoSi and SiO₂ surfaces representative of photomasks layers", Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450I (15 May 2010); https://doi.org/10.1117/12.863877

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