Pr:YAlO[sub]3[/sub] and Pr:LiYF[sub]4[/sub] laser emission comparison under GaN laser diode pumping

Martin Fibrich; Helena Jelínková; Jan Šulc; Karel Nejezchleb; Václav Škoda

doi:10.1117/12.840008

17 February 2010 Pr:YAlO₃ and Pr:LiYF₄ laser emission comparison under GaN laser diode pumping

Martin Fibrich, Helena Jelínková, Jan Šulc, Karel Nejezchleb, Václav Škoda

Proceedings Volume 7578, Solid State Lasers XIX: Technology and Devices; 757828 (2010) https://doi.org/10.1117/12.840008
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

In this paper we report on comparison of laser results reached by Pr-doped oxide and fluoride crystals under GaN-laser diode pumping at room temperature. As oxide and fluoride crystal representatives, Pr:YAlO₃ (Pr:YAP) and Pr:LiYF₄ (Pr:YLF) crystals were used. Pumping was accomplished by multimode GaN-laser diodes capable of providing output powers of up to 1W at wavelengths corresponding with Pr:YAP and Pr:YLF absorption peaks. For both samples, efficient stimulated emission in the red laser transition has been demonstrated, and laser results regarding the output power, threshold, and slope efficiency with respect to the absorbed power have been compared.

Citation Download Citation

Martin Fibrich, Helena Jelínková, Jan Šulc, Karel Nejezchleb, and Václav Škoda "Pr:YAlO₃ and Pr:LiYF₄ laser emission comparison under GaN laser diode pumping", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 757828 (17 February 2010); https://doi.org/10.1117/12.840008

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