Temperature-dependent random lasing from GaAs powders

T. Nakamura; T. Takahashi; S. Adachi

doi:10.1117/12.846085

17 February 2010 Temperature-dependent random lasing from GaAs powders

T. Nakamura, T. Takahashi, S. Adachi

Proceedings Volume 7579, Laser Resonators and Beam Control XII; 75791J (2010) https://doi.org/10.1117/12.846085
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

We investigate the temperature dependence of lasing properties of GaAs powders with non-resonant feedback from T = 30 to 300 K. The lasing peak energy, emission intensity, and width of the lasing emission band are found to be strongly dependent on the temperature. The dependence of the lasing peak energy on T is well explained by a theoretical model for the calculation of the gain spectra of heavily doped n-GaAs. The temperature dependence of the lasing emission intensity is different from the spontaneous emission intensity. We also find that the width of the lasing emission band is linearly proportional to the spontaneous emission band width. The linearity corresponds to the prediction by a diffusion theory.

Citation Download Citation

T. Nakamura, T. Takahashi, and S. Adachi "Temperature-dependent random lasing from GaAs powders", Proc. SPIE 7579, Laser Resonators and Beam Control XII, 75791J (17 February 2010); https://doi.org/10.1117/12.846085

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