Paper
17 February 2010 High-quality percussion drilling of silicon with a CW fiber laser
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Abstract
It has been shown that 30 ns FWHM duration pulses from a MOPA fiber laser (wavelength: 1064 nm) cleanly micromachines silicon with little cracking or heat-affected zone1. In this paper, we show that similar results can be achieved using a 1070 nm quasi-continuous wave laser pulsed with a 6.6 μs duration (average power: 2.8 W) in combination with coaxially delivered nitrogen assist gas. The holes are cut at a 5 kHz repetition rate with a resulting diameter on the order of 15 μm and an etch rate of up to 18 μm/pulse. Hole size is increased for longer pulses and the heat-affected zone broadens to greater than 25 μm with no assist gas. By combining low coherence microscopy with machining, we depth image the machining front and obtain in situ images during and after the drilling process showing rich cut dynamics in real time.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joe X. Z. Yu, Paul J. L. Webster, Ben Y. C. Leung, and James M. Fraser "High-quality percussion drilling of silicon with a CW fiber laser", Proc. SPIE 7584, Laser Applications in Microelectronic and Optoelectronic Manufacturing XV, 75840W (17 February 2010); https://doi.org/10.1117/12.842616
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CITATIONS
Cited by 8 scholarly publications.
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KEYWORDS
Silicon

Fiber lasers

Semiconductor lasers

Absorption

Image processing

Etching

Laser ablation

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