Surface plasmon effects induced by uncollimated emission of semiconductor microstructures

Dominic Lepage; Jan J. Dubowski

doi:10.1117/12.843239

26 February 2010 Surface plasmon effects induced by uncollimated emission of semiconductor microstructures

Dominic Lepage, Jan J. Dubowski

Proceedings Volume 7586, Synthesis and Photonics of Nanoscale Materials VII; 758607 (2010) https://doi.org/10.1117/12.843239
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

We investigate the functioning of an innovative monolithically integrated surface plasmon resonance (SPR) device comprising a metal coated SiO₂ layer deposited atop a photoluminescence emitting quantum well (QW) wafer. The device takes advantage of the uncollimated and incoherent emission of QW microstructure. This presents a non-trivial problem in our goal to describe quantitatively the functioning of such a device. We discuss the results of our calculations based on a rigorous coupled-wave analysis algorithm and tensorial approach aimed at the full description of surface plasmons (SPs) coupling in QW semiconductor-based SPR architectures designed for biosensing applications. The results indicate that the injected in-plane wavevectors increase the SPs coupling efficiency up to 10³ times in comparison to indirect SPs injection. We discuss the general idea of an experimental setup required for collecting the 3D measurement of SPR dispersion relations hω(k_x,k_y), potentially enabling a much richer picture of surficial biochemical events. Preliminary results indicate that the proposed methodology produces simultaneously the equivalent of 10⁵ to 10⁸ conventional SPR scans achievable with commercial systems.

Citation Download Citation

Dominic Lepage and Jan J. Dubowski "Surface plasmon effects induced by uncollimated emission of semiconductor microstructures", Proc. SPIE 7586, Synthesis and Photonics of Nanoscale Materials VII, 758607 (26 February 2010); https://doi.org/10.1117/12.843239

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