Paper
16 February 2010 Laser microstructuring of sapphire wafer and fiber
Yutang Dai, Gang Xu, Jianlei Cui, Fan Bai
Author Affiliations +
Abstract
Currently, sapphire is widely used in the field of optoelectronic devices and micro-mechanical components. One of the problems in using sapphire is the difficulty in cutting and micro-structuring due to the hardness of sapphire itself. In this paper, laser micromachining characteristics of sapphire are investigated using 157nm DUV laser micro-ablation system. Under laser fluence of 3-4 J/cm2, the maximum ablation rate could reach to 400nm/s. For 3D laser ablation, it is necessary to select a proper combination of process parameters. Several 3D micro-structures are produced in sapphire wafers and sapphire fibers. As a whole, the ablation equality is good for use.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yutang Dai, Gang Xu, Jianlei Cui, and Fan Bai "Laser microstructuring of sapphire wafer and fiber", Proc. SPIE 7590, Micromachining and Microfabrication Process Technology XV, 75900O (16 February 2010); https://doi.org/10.1117/12.841098
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Cited by 3 scholarly publications.
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KEYWORDS
Sapphire

Laser ablation

Etching

Aluminum

Semiconducting wafers

Pulsed laser operation

Fiber lasers

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