Optoelectronic and transport properties of nanocolumnar InGaN/GaN quantum disk LEDs

F. Sacconi; G. Penazzi; A. Pecchia; M. Auf der Maur; A. Di Carlo

doi:10.1117/12.840533

25 February 2010 Optoelectronic and transport properties of nanocolumnar InGaN/GaN quantum disk LEDs

F. Sacconi, G. Penazzi, A. Pecchia, M. Auf der Maur, A. Di Carlo

Proceedings Volume 7597, Physics and Simulation of Optoelectronic Devices XVIII; 75970D (2010) https://doi.org/10.1117/12.840533
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

In this work we use the multi-scale software tool TiberCAD to study the transport and optical properties of InGaN quantum disk (QD) - based GaN nanocolumn p-i-n diode structures. IV characteristics have been calculated for several values of In concentration in the QD and of nanocolumn width. Strain maps show a clear relaxation effect close to the column boundaries, which tends to vanish for the larger columns. Effects of strain and polarization fields on the electron and hole states in the QD are shown, together with the dependence of optical emission spectra on geometrical and material parameters.

Citation Download Citation

F. Sacconi, G. Penazzi, A. Pecchia, M. Auf der Maur, and A. Di Carlo "Optoelectronic and transport properties of nanocolumnar InGaN/GaN quantum disk LEDs", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970D (25 February 2010); https://doi.org/10.1117/12.840533

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