Role of the electron blocking layer in the current transport of efficient III-N light-emitting diodes

Oskari Heikkilä; Jani Oksanen; Jukka Tulkki

doi:10.1117/12.839406

25 February 2010 Role of the electron blocking layer in the current transport of efficient III-N light-emitting diodes

Oskari Heikkilä, Jani Oksanen, Jukka Tulkki

Proceedings Volume 7597, Physics and Simulation of Optoelectronic Devices XVIII; 75970E (2010) https://doi.org/10.1117/12.839406
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Electron blocking layers (EBLs) are commonly used to reduce the leakage current in modern multi-quantum well (MQW) InGaN light-emitting diodes (LEDs). We study the effect of the EBL and doping on the operation and efficiency of LEDs. We simulate both conventional MQW LEDs with AlGaN EBL, LEDs with quaternary AlInGaN EBL and LEDs without EBL. We show that the elimination of the polarization charges at the EBL interface greatly enhances the injection efficiency and that the hole injection in MQW lattice can be optimized by doping. The efficiency droop limiting the high power operation is also analyzed to determine the underlying mechanisms in the simulated MQW structures. Based on these results, we discuss the measures to increase the overall efficiency MQW structures.

Citation Download Citation

Oskari Heikkilä, Jani Oksanen, and Jukka Tulkki "Role of the electron blocking layer in the current transport of efficient III-N light-emitting diodes", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970E (25 February 2010); https://doi.org/10.1117/12.839406

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KEYWORDS

Light emitting diodes

Electron beam lithography

Polarization

External quantum efficiency

Quantum wells

Doping

Gallium nitride

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