Study on temperature characteristic of green photodetector on Si substrate

Xiansong Fu; Suying Yao; Shengcai Zhang; Yunguang Zheng; Pingjuan Niu; Xiaoyun Li; Guanghua Yang

doi:10.1117/12.841621

25 February 2010 Study on temperature characteristic of green photodetector on Si substrate

Xiansong Fu, Suying Yao, Shengcai Zhang, Yunguang Zheng, Pingjuan Niu, Xiaoyun Li, Guanghua Yang

Proceedings Volume 7597, Physics and Simulation of Optoelectronic Devices XVIII; 759722 (2010) https://doi.org/10.1117/12.841621
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

In the paper, a silicon PN junction photodetector is developed on the basis of n-type single-crystal (100) silicon substrate. The properties of this semiconductor photodetctor depend on the temperature to certain extent. We emphasize on the study on temperature characteristic of the photodetector: Firstly, the temperature behavior of dark current at zero bias voltage and wide temperature range was investigated. Results show that dark current increases exponentially with temperature over room temperature. Secondly, the temperature behavior of photo current at zero bias voltage and wide temperature range was studied. The temperature characteristic is analysesed in the theory and optimized.

Citation Download Citation

Xiansong Fu, Suying Yao, Shengcai Zhang, Yunguang Zheng, Pingjuan Niu, Xiaoyun Li, and Guanghua Yang "Study on temperature characteristic of green photodetector on Si substrate", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759722 (25 February 2010); https://doi.org/10.1117/12.841621

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