Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Arvydas Matulionis; Juozapas Liberis; Hadis Morkoç

doi:10.1117/12.843659

10 March 2010 Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Arvydas Matulionis, Juozapas Liberis, Hadis Morkoç

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020H (2010) https://doi.org/10.1117/12.843659
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

A bottleneck for heat dissipation is discussed in terms of plasmon-assisted decay of nonequilibrium longitudinal optical phonons launched by hot electrons. According to experiment at low and moderate electric fields, the fastest decay takes place at electron density of ~6.7×10¹² cm^-2 and ~2.7×10¹² cm^-2 for heterostructures with 2DEG channels located in GaN and GaInAs, respectively. Hot-electron temperature and gate voltage can be used to shift the optimal density. A GaN-based heterostructure field effect transistor degrades slower when dissipation of the LO-mode heat is faster.

Citation Download Citation

Arvydas Matulionis, Juozapas Liberis, and Hadis Morkoç "Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020H (10 March 2010); https://doi.org/10.1117/12.843659

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available