Novel device concepts for high-efficiency InGaN-based light-emitting diodes

Hongping Zhao; Guangyu Liu; Yik-Khoon Ee; Xiao-Hang Li; Hua Tong; Jing Zhang; G. S. Huang; Nelson Tansu

doi:10.1117/12.842869

12 March 2010 Novel device concepts for high-efficiency InGaN-based light-emitting diodes

Hongping Zhao, Guangyu Liu, Yik-Khoon Ee, Xiao-Hang Li, Hua Tong, Jing Zhang, G. S. Huang, Nelson Tansu

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76021G (2010) https://doi.org/10.1117/12.842869
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Novel staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs with improved momentum matrix element lead to improved internal quantum efficiency for green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal quantum efficiency, light extraction efficiency, and efficiency-droop in nitride LEDs are discussed.

Citation Download Citation

Hongping Zhao, Guangyu Liu, Yik-Khoon Ee, Xiao-Hang Li, Hua Tong, Jing Zhang, G. S. Huang, and Nelson Tansu "Novel device concepts for high-efficiency InGaN-based light-emitting diodes", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021G (12 March 2010); https://doi.org/10.1117/12.842869

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