Improved silicon light emission for reach- and punch-through devices in standard CMOS

Petrus J. Venter; Monuko du Plessis

doi:10.1117/12.841357

23 February 2010 Improved silicon light emission for reach- and punch-through devices in standard CMOS

Petrus J. Venter, Monuko du Plessis

Proceedings Volume 7607, Optoelectronic Interconnects and Component Integration IX; 76070Z (2010) https://doi.org/10.1117/12.841357
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

A key requirement for the success of future microphotonic devices will be the ability to integrate such devices into current mainstream semiconductor technologies. The ability to create silicon-based light sources in a standard CMOS process is therefore very appealing. It is known that avalanche silicon LED efficiency can be increased using reach- and punch-through mechanisms. This paper reveals a technique for improving the operational performance of a silicon light source by increasing the external quantum efficiency and relaxing the separation requirements for the light source operating under the mentioned reach- or punch-through mechanisms in a standard unmodified local oxidation of silicon (LOCOS) CMOS process.

Citation Download Citation

Petrus J. Venter and Monuko du Plessis "Improved silicon light emission for reach- and punch-through devices in standard CMOS", Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 76070Z (23 February 2010); https://doi.org/10.1117/12.841357

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