Life-stress relationship for thin film transistor gate line interconnects on flexible substrates

Thomas Martin; Aris Christou

doi:10.1117/12.840044

23 February 2010 Life-stress relationship for thin film transistor gate line interconnects on flexible substrates

Thomas Martin, Aris Christou

Proceedings Volume 7607, Optoelectronic Interconnects and Component Integration IX; 760712 (2010) https://doi.org/10.1117/12.840044
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Change in resistance of interconnect traces on flexible substrates is dependent on material properties and mechanical stress imposed by tensile strain. Dedicated test structures and a mechanical flexing / data collection system were designed and fabricated to collect time to failure data based on cyclic loading to different radii of curvature. We propose a life-stress model based on an inverse power law relationship defining the characteristic life of a Weibull life distribution.

Citation Download Citation

Thomas Martin and Aris Christou "Life-stress relationship for thin film transistor gate line interconnects on flexible substrates", Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 760712 (23 February 2010); https://doi.org/10.1117/12.840044

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