Ambipolar organic phototransistor based on F16CuPc/&#945;6T pn heterojunction

Rongbin Ye; Mamoru Baba; Koji Ohta

doi:10.1117/12.851996

25 November 2009 Ambipolar organic phototransistor based on F₁₆CuPc/α6T pn heterojunction

Rongbin Ye, Mamoru Baba, Koji Ohta

Proceedings Volume 7634, Optical Sensors and Biophotonics; 76341D (2009) https://doi.org/10.1117/12.851996
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China

Abstract

We studied the electrical performance of ambipolar organic transistors based on an F₁₆CuPc/α6T pn heterojunction illuminated by a light from a white LED. As the illumination intensity is increased up to ca. 3000 Lux, the hole mobility decreases to about 1/3 while the electron mobility is only slightly increased. Photogeneration carriers (electrons) enhances n-channel operating characteristics, which results a decrease in gate voltage applied to the second active layer (or the increase in gate voltage applied in the depletion layer or the first layer), which suppresses p-channel operating characteristics although the photogeneration carriers (holes) also enhances p-channel operating characteristics. This result implies that the photoinduced charge transfer in the F₁₆CuPc/α6T pn heterojunction devices is mainly dominated by the acceptor semiconductor (F₁₆CuPc). The drain current is significantly increased (n-channel) or decreased (p-channel) by a light, which is used as an additional control parameter making the device interesting for sensor applications.

Citation Download Citation

Rongbin Ye, Mamoru Baba, and Koji Ohta "Ambipolar organic phototransistor based on F₁₆CuPc/α6T pn heterojunction", Proc. SPIE 7634, Optical Sensors and Biophotonics, 76341D (25 November 2009); https://doi.org/10.1117/12.851996

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