Paper
25 November 2009 Performance of 650 nm AlGaInP RCLEDs with different P-type DBRs
Yidan Tang, Yixin Chen, Jun Ma, Deshu Zou, Jinru Han, Xia Guo, Guangdi Shen
Author Affiliations +
Proceedings Volume 7635, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy; 763504 (2009) https://doi.org/10.1117/12.850633
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
Resonant cavity light-emitting diodes (RCLEDs) which composed of active region surrounded by two distributed Bragg reflector (DBR) mirrors have been reported in the communication system based on Plastic Optical Fiber (POF) and high brightness application. However, high performance of 650nm AlGaInP RCLED, which is strongly depends on the optimization of DBRs, especially the matched reflectivity between p-type and n-type DBR mirrors, is still difficult to obtain. In this paper, the performance of 650nm RCLEDs including 34-pair AlGaAs/AlAs n-type DBRs and different pairs of AlGaInP/AlInP p-type DBRs have been investigated both theoretically and experimentally. Top emitting chips with the size of 225x225μm2 without encapsulation were fabricated under the same conditions, experimental results reveal that the device of optimized DBR mirrors with 10-pair p-type DBRs obtain high efficiency, low turn-on voltage and forward resistance, good temperature stability.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yidan Tang, Yixin Chen, Jun Ma, Deshu Zou, Jinru Han, Xia Guo, and Guangdi Shen "Performance of 650 nm AlGaInP RCLEDs with different P-type DBRs", Proc. SPIE 7635, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy, 763504 (25 November 2009); https://doi.org/10.1117/12.850633
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mirrors

Reflectivity

Aluminium gallium indium phosphide

Resistance

Light emitting diodes

Luminous efficiency

Telecommunications

Back to Top