Characterization of EUV optics contamination due to photoresist related outgassing

I. Pollentier; A.-M. Goethals; R. Gronheid; J. Steinhoff; J. Van Dijk

doi:10.1117/12.846842

22 March 2010 Characterization of EUV optics contamination due to photoresist related outgassing

I. Pollentier, A.-M. Goethals, R. Gronheid, J. Steinhoff, J. Van Dijk

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76361W (2010) https://doi.org/10.1117/12.846842
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Outgassing of photoresist material and the related risk for optics contamination in extreme ultraviolet (EUV) exposure tools are concerns in the development of EUV lithography, especially towards the high volume manufacturing tools. The characterization however of which resist species are important for the contamination, and their quantification, is still very challenging. Currently various techniques are explored worldwide, but there is still no full consensus on which technique is most adequate. On one hand, investigation is done by measuring only the resist outgassing by residual gas analysis (RGA), pressure rise or other related analysis techniques. Another investigation approach is focusing on the measurement of EUV optics contamination by analyzing the contamination generated on a witness sample which is exposed in the vicinity of resist outgassing. In this paper, we have focused mainly on the witness sample approach as a possible candidate for photoresist qualification. Contamination results obtained at ASML's and imec's test equipment are compared, which enables better understanding of the parameters that can affect the resist related contamination growth. Moreover, the contamination generated on the witness samples is characterized in detail towards thickness as well as composition, by using various material analysis techniques. Finally the contamination behavior is compared to the RGA resist outgassing information for better understanding of the over-all issue. These findings form a solid basis to quantify the risks involved of using specific photoresist materials in high volume manufacturing exposure tools with a simple but adequate test method, applied to qualify resists.

Citation Download Citation

I. Pollentier, A.-M. Goethals, R. Gronheid, J. Steinhoff, and J. Van Dijk "Characterization of EUV optics contamination due to photoresist related outgassing", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361W (22 March 2010); https://doi.org/10.1117/12.846842

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