Paper
1 April 2010 Reducing the impact of reticle CD-non-uniformity of multiple structures by dose corrections based on aerial image measurements
Author Affiliations +
Abstract
For many critical lithography applications the main contributor to wafer intra-field CD variation is the reticle CD variation. Current practice is that the input data needed to correct the effect of the reticle on the wafer CD is gathered using wafer exposures and SEM or scatterometry analysis. This approach consumes valuable scanner time and adds wafer costs. In this work we evaluate the potential for Intra-Field CD non-uniformity (CDU) correction based on aerial image reticle measurements for a complex 2D structure, including peripheral structures. The application selected is a 45nm rotated brick wall structure (active area DRAM). A total of 10 line / space structures (both horizontal and vertical) through pitch represent the periphery. Mask qualification has been performed using the newly developed Zeiss WLCD32 metrology tool, which measures wafer level CD on masks using aerial imaging technology. Excellent correlation is shown between intra-field wafer data and WLCD32 data. Furthermore, a comparison is made between the correction potential of ASML DoseMapper recipes based on wafer data and on WLCD32 mask data, indicating that the potential CDU improvement via both approaches is similar. Exposures with the resulting dose recipes have been used to confirm this predicted correction potential in a realistic setting.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ute Buttgereit, Robert Birkner, Thomas Scheruebl, Sander de Putter, Bernardo Kastrup, and Jo Finders "Reducing the impact of reticle CD-non-uniformity of multiple structures by dose corrections based on aerial image measurements", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380D (1 April 2010); https://doi.org/10.1117/12.848053
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconducting wafers

Reticles

Critical dimension metrology

Metrology

Scanners

Photomasks

Scanning electron microscopy

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