Advanced patterning solutions based on the shrink process assisted by double exposure (SPADE)

Young C. Bae; Yi Liu; Thomas Cardolaccia; Rosemary Bell; Ken Spizuoco; George G. Barclay

doi:10.1117/12.848047

25 March 2010 Advanced patterning solutions based on the "shrink process assisted by double exposure" (SPADE)

Young C. Bae, Yi Liu, Thomas Cardolaccia, Rosemary Bell, Ken Spizuoco, George G. Barclay

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76390C (2010) https://doi.org/10.1117/12.848047
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

By combining chemical and thermal curing techniques, we developed a simple "hybrid" curing system which offers precise CD control of the first patterns after double patterning. This hybrid curing system involves thermal curing followed by a liquid rinse process using a double patterning primer (DPP). DPP is an aqueous solution formulated with surface curing agent (SCA) components and enhances "positive" interaction between L1 and L2 patterns. Taking advantage of the CD growth with DPP treatment, we further developed three advanced patterning schemes: 1. "Shrink Process Assisted by Double Exposure" (SPADE I), 2. "Space Patterning Assisted by Double Exposure" (SPADE II), and 3. "Sidewall Patterning Assisted by Double Exposure" (SPADE III). Using SPADE I, contact hole CD was reduced by 10~30nm and excellent through pitch performance was achieved. Using SPADE II, the first example of self-aligned double patterning of contact holes has been demonstrated. After SPADE II, the contact hole pitch was reduced by 30%. A novel method was developed to form sidewalls on the existing patterns using SPADE III. The 2D sidewall patterning with contact holes was demonstrated and ~40nm sidewalls were formed using SPADE III. This can also be applied to form sidewall patterns on line and space patterns to self-aligned double patterning of lines. In this paper, our recent progress with SPADE technology is described and its potential use in the advanced patterning schemes is discussed.

Citation Download Citation

Young C. Bae, Yi Liu, Thomas Cardolaccia, Rosemary Bell, Ken Spizuoco, and George G. Barclay "Advanced patterning solutions based on the "shrink process assisted by double exposure" (SPADE)", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390C (25 March 2010); https://doi.org/10.1117/12.848047

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available