MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors

Dmitri Lubyshev; Joel M. Fastenau; Xing Gu; Amy W. K. Liu; John Prineas; Edwin J. Koerperick; Jonathon T. Olesberg; Eric M. Jackson; Jill A. Nolde; Changhyun Yi; Edward H. Aifer

doi:10.1117/12.851053

3 May 2010 MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors

Dmitri Lubyshev, Joel M. Fastenau, Xing Gu, Amy W. K. Liu, John Prineas, Edwin J. Koerperick, Jonathon T. Olesberg, Eric M. Jackson, Jill A. Nolde, Changhyun Yi, Edward H. Aifer

Author Affiliations +

Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76601J (2010) https://doi.org/10.1117/12.851053
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

Ga(In)Sb/InAs-based strained-layer superlattices (SLS) have received considerable attention recently for their potential in infrared (IR) applications. These heterostructures create a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of Ga(In)Sb layer. By varying the thickness and composition of the constituent materials, the bandgap of these SLS structures can be tailored to cover a wide range of the mid-wave and long-wave infrared (MWIR and LWIR) absorption bands. Suppression of Auger recombination and reduction of tunneling current can also be realized through careful design of the Type-II band structure. The growth of high-quality Ga(In)Sb/InAs-based SLS epiwafers is challenging due to the complexity of growing a large number of alternating thin layers with mixed group V elements. In this paper, the development of a manufacturable growth process by molecular beam epitaxy (MBE) using a multi-wafer production reactor will be discussed. Various techniques were used to analyze the quality of the epitaxial material. Structural properties were evaluated by high-resolution x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). Optical properties were assessed by low-temperature photoluminescence measurements (PL). Surface morphology and roughness data as measured by Nomarski optical microscope and atomic force microscope (AFM) will be presented. Device characteristics such as dynamic impedance, responsivity, quantum efficiency, and J-V characteristics of photodiodes fabricated using our SLS epiwafers will be discussed.

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Dmitri Lubyshev, Joel M. Fastenau, Xing Gu, Amy W. K. Liu, John Prineas, Edwin J. Koerperick, Jonathon T. Olesberg, Eric M. Jackson, Jill A. Nolde, Changhyun Yi, and Edward H. Aifer "MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76601J (3 May 2010); https://doi.org/10.1117/12.851053

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