Characterization of an InGaN-based photo-emissive device

J. W. Glesener; A. M. Dabiran; J. P. Estrera

doi:10.1117/12.858173

5 May 2010 Characterization of an InGaN-based photo-emissive device

J. W. Glesener, A. M. Dabiran, J. P. Estrera

Proceedings Volume 7666, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense IX; 766620 (2010) https://doi.org/10.1117/12.858173
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

InGaN alloy fluctuations have been exploited in many nitride optoelectronic devices. This work reports on the application of InGaN alloy fluctuations in a packaged vacuum electronic device utilizing an InGaN photocathode as the detector element. The resulting image intensifier is the first ever InGaN imaging detector. Exploitation of the particular InGaN properties of alloy fluctuations has several positive consequences for photocathodes. One, it is advantages because of the possibility of extending the spectral response to the longer wavelengths with lower average indium concentrations. Two, in achieving a longer wavelength response, this lessens the strain at the sapphire-AlN-InGaN interface because a lower average In percentage can be used. Thirdly, the larger bandgap InGaN matrix material will have a lower amount of thermionic emission coupled with this longer wavelength photoresponse. Finally, an InGaN alloy with visible response holds the promise in that it can be grown directly on a sapphire window as opposed to the compression bonding of GaAs as originally reported by Antypas and Edgecumbe.

Citation Download Citation

J. W. Glesener, A. M. Dabiran, and J. P. Estrera "Characterization of an InGaN-based photo-emissive device", Proc. SPIE 7666, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense IX, 766620 (5 May 2010); https://doi.org/10.1117/12.858173

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