Terahertz detection with field-effect-transistors via bulk plasmon-assisted self-mixing

Sangwoo Kim; Mark S. Sherwin

doi:10.1117/12.849710

26 April 2010 Terahertz detection with field-effect-transistors via bulk plasmon-assisted self-mixing

Sangwoo Kim, Mark S. Sherwin

Proceedings Volume 7671, Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense; 767104 (2010) https://doi.org/10.1117/12.849710
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

We previously reported resonant photovoltaic terahertz detection via bulk plasmons in GaAs field-effect-transistors (FETs). Here, we introduce a device model which incorporates the microscopic dynamics of terahertz-field-driven electrons in the FET channel, resonant excitation of three dimensional (bulk) plasmons, and self-mixing theory of Lisauskas and Pfeiffer. The resulting model can simulate our experimental results and implies a bulk plasmon-assisted terahertz self-mixing process occurs in the FET-based terahertz detectors. The model also suggests three factors are important to improving the device performance – power coupling efficiency, self-mixing efficiency, and resonance with bulk plasmons.

Citation Download Citation

Sangwoo Kim and Mark S. Sherwin "Terahertz detection with field-effect-transistors via bulk plasmon-assisted self-mixing", Proc. SPIE 7671, Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense, 767104 (26 April 2010); https://doi.org/10.1117/12.849710

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