Sensitivity enhancement of vapor sensors with porous silicon resonant structures

Rob N. Candler; Yongha Hwang; Feng Gao

doi:10.1117/12.850390

5 May 2010 Sensitivity enhancement of vapor sensors with porous silicon resonant structures

Rob N. Candler, Yongha Hwang, Feng Gao

Proceedings Volume 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II; 76790K (2010) https://doi.org/10.1117/12.850390
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

Miniaturization of mass-based resonant sensors is a promising strategy for chemical detection due to the increased sensitivity afforded by decreased length scales. However, while the increased surface area-to-volume ratios of microand nano-scale devices provide sensitivity benefits, smaller scales pose additional challenges in fabrication. We introduce the use of porous silicon resonators to provide increased sensitivity in resonant vapor sensors with minimal fabrication challenge. Standard top-down processes were used to fabricate micrometer-scale resonators with nanometerscale pores. The increased surface area of the porous resonating structures improved their detection sensitivity, and the porous nature of the resonator itself eliminated the need to apply porous coatings separate from the resonator. At present, porous silicon resonators show up to 100% sensitivity enhancement to isopropyl alcohol (vapor) over non-porous silicon resonators. Ongoing work involves investigating the limits of porosity and therefore sensitivity, the tradeoff between porosity and mechanical robustness, and the physics of resonant porous materials.

Citation Download Citation

Rob N. Candler, Yongha Hwang, and Feng Gao "Sensitivity enhancement of vapor sensors with porous silicon resonant structures", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790K (5 May 2010); https://doi.org/10.1117/12.850390

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