GaAs-based quantum well solar cells for defense applications

Roger E. Welser; Ashok K. Sood; Yash R. Puri; Oleg A. Laboutin; Nibir K. Dhar; Priyalal S. Wijewarnasuriya

doi:10.1117/12.852802

28 April 2010 GaAs-based quantum well solar cells for defense applications

Roger E. Welser, Ashok K. Sood, Yash R. Puri, Oleg A. Laboutin, Nibir K. Dhar, Priyalal S. Wijewarnasuriya

Proceedings Volume 7683, Energy Harvesting and Storage: Materials, Devices, and Applications; 76830Q (2010) https://doi.org/10.1117/12.852802
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

Quantum-well based solar cells have the potential to deliver ultra-high efficiencies in single-junction devices, efficiencies that in theory can approach 45% in un-concentrated sunlight over a wide range of environmental conditions. In this work, thin-film GaAs-based quantum well solar cells are demonstrated that operate at voltages higher than previous state-of-the-art GaAs devices. Higher open circuit voltages result from the use of a novel structure incorporating a wide band gap barrier layer within a heterojunction depletion region. Ultra-low dark current is observed from this structure as result of the simultaneous reduction of carrier diffusion and space charge recombination. Efficient carrier extraction of photogenerated carries over the potential barriers within the structure is achieved by increasing the field strength and tailoring the barrier profile to enhance thermionic emission and tunneling. High open circuit voltages (>1.1 V @ 25 A/cm²) and fill factors (> 80%) are demonstrated in multi-layer depletion region structures incorporating both an extended region of wide band gap material and an InGaAs quantum well within a GaAs base layer. These ground breaking results indicate that it is possible to simultaneously increase both the current and voltage output of GaAs-based solar cells.

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Roger E. Welser, Ashok K. Sood, Yash R. Puri, Oleg A. Laboutin, Nibir K. Dhar, and Priyalal S. Wijewarnasuriya "GaAs-based quantum well solar cells for defense applications", Proc. SPIE 7683, Energy Harvesting and Storage: Materials, Devices, and Applications, 76830Q (28 April 2010); https://doi.org/10.1117/12.852802

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KEYWORDS

Solar cells

Gallium arsenide

Quantum wells

Indium gallium arsenide

Solar energy

Heterojunctions

Quantum efficiency

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