Low-temperature crystallization of TiO2 films by sputter deposition

Yasunori Taga; Naoomi Yamada

doi:10.1117/12.849297

28 April 2010 Low-temperature crystallization of TiO₂ films by sputter deposition

Yasunori Taga, Naoomi Yamada

Proceedings Volume 7683, Energy Harvesting and Storage: Materials, Devices, and Applications; 768310 (2010) https://doi.org/10.1117/12.849297
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

Crystalline TiO₂ film was formed on PET(polyethlene terephthalate) film by radio frequency sputter deposition method using a sintered TiO₂ target by adding H₂O gas to Ar gas for sputtering. X-ray diffraction analysis revealed that the crystal structure of the film of 100 nm thick was confirmed to be anatase crystallites of TiO₂. In order to elucidate the mechanism of low temperature crystallization thus observed, direct measurement of surface temperature of growing films during sputter deposition was carried out by two methods of an infrared thermometer from the outside of vacuum chamber and a thermocouple attached to the growing film surface. Upon the beginning of sputter deposition in Ar gas, film temperature increased rapidly and became constant at 120°C after 30 min. Addition of H₂O gas to Ar gas for sputtering resulted in further increase in film temperature and reached to 230 °C depending on the deposition conditions. Furthermore, photocatalytic performance of decomposition of methylene blue was examined to be enhanced remarkably as a result of crystallization of the film. It was concluded that low temperature crystallization of TiO₂ film by sputter deposition was explained in terms of local heating of thin shallow surface region of growing film by kinetic energy deposition of sputtered particles.

Citation Download Citation

Yasunori Taga and Naoomi Yamada "Low-temperature crystallization of TiO₂ films by sputter deposition", Proc. SPIE 7683, Energy Harvesting and Storage: Materials, Devices, and Applications, 768310 (28 April 2010); https://doi.org/10.1117/12.849297

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