All-optical switching in photonic crystals based on porous silicon

Svetlana M. Afonina; Eugene D. Maslennikov; Stanislav V. Zabotnov; Leonid A. Golovan

doi:10.1117/12.854054

14 May 2010 All-optical switching in photonic crystals based on porous silicon

Svetlana M. Afonina, Eugene D. Maslennikov, Stanislav V. Zabotnov, Leonid A. Golovan

Proceedings Volume 7713, Photonic Crystal Materials and Devices IX; 77131M (2010) https://doi.org/10.1117/12.854054
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

Photonic crystal as the porous silicon multilayer structure was designed and formed. Such structures can be characterized by increased nonlinear optical response due to the weak light localization and could be used to implement all-optical switching. We showed the possibility of the essential photonic band gap edge shift due to a shift of the photonic bandgap edge in the intense laser radiation field due to light self-action effect. All-optical switching in photonic crystals allows to realize logic gates that can be implemented in photonic devices.

Citation Download Citation

Svetlana M. Afonina, Eugene D. Maslennikov, Stanislav V. Zabotnov, and Leonid A. Golovan "All-optical switching in photonic crystals based on porous silicon", Proc. SPIE 7713, Photonic Crystal Materials and Devices IX, 77131M (14 May 2010); https://doi.org/10.1117/12.854054

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