Paper
17 May 2010 Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film
Author Affiliations +
Abstract
We report on the formation of spatially localized crystals in SiO2-SnO2 thin films fabricated by the sol-gel technique. This material presents an intense absorption band (α≈103cm-1) in the UV region. A continuous wave UV laser operating at 266nm focused through a microscope objective is used as an effective tool to modify locally the matrix containing photorefractive SnO2. The UV micro-Raman spectrometer is used to study the evolution of SnO2 crystals in the thin film. The appearance of the Raman scattering peak at 621cm-1, assigned to the A1g mode of rutile SnO2, confirms the formation of nanocrystals in the focalised UV irradiated zone.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. N. Shivakiran Bhaktha, Simone Berneschi, Gualtiero Nunzi Conti, Giancarlo C. Righini, Andrea Chiappini, Alessandro Chiasera, Maurizio Ferrari, and Sylvia Turrell "Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77191B (17 May 2010); https://doi.org/10.1117/12.854894
Lens.org Logo
CITATIONS
Cited by 7 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Thin films

Ultraviolet radiation

Crystals

Micro raman spectroscopy

Absorption

Waveguides

Silica

Back to Top