Influence of the localization of process-induced disorder on planar photonic crystal waveguide properties

Ran Hao; Eric Cassan

doi:10.1117/12.853872

17 May 2010 Influence of the localization of process-induced disorder on planar photonic crystal waveguide properties

Ran Hao, Eric Cassan

Proceedings Volume 7719, Silicon Photonics and Photonic Integrated Circuits II; 77191K (2010) https://doi.org/10.1117/12.853872
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

The influence on photonic crystal waveguide properties of the fabrication-induced disorder was numerically studied. By comparing the transmission spectra obtained using 3D-FDTD for four kinds of fabrication disorders, it was shown that disorder modifies the waveguide mode properties, especially in the slow light regime. Emphasis was put on the influence of the disorder localization. Results have shown the major role played by technological fluctuations of the size, shape, and position of the two first rows of holes along PhC waveguide axis. Results have revealed that bandgap properties remain almost unaffected even for huge disorder levels provided that the two first rows of holes remain unchanged. Interestingly, 3D-simulation have also shown that sharp transmission spectrum cutoffs that characteristize slow wave modes in the two-dimensional PhC bandgap are then not suppressed by the introduction of disorder but are only blue-shifted. This point constitutes an interesting result for optical integrated devices relying on low group velocity phenomena.

Citation Download Citation

Ran Hao and Eric Cassan "Influence of the localization of process-induced disorder on planar photonic crystal waveguide properties", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77191K (17 May 2010); https://doi.org/10.1117/12.853872

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KEYWORDS

Slow light

Waveguides

Transmittance

Photonic crystals

Finite-difference time-domain method

Etching

Integrated optics

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