Productivity improvement of high resolution inspection mode on TeraScan 597XR

Hidemichi Imai; Takeshi Kosuge; Kei Mesuda; Eiji Tsujimoto; Hideyoshi Takamizawa

doi:10.1117/12.867983

26 May 2010 Productivity improvement of high resolution inspection mode on TeraScan 597XR

Hidemichi Imai, Takeshi Kosuge, Kei Mesuda, Eiji Tsujimoto, Hideyoshi Takamizawa

Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 77480Q (2010) https://doi.org/10.1117/12.867983
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan

Abstract

At 32nm node and beyond, a common approach in defect inspection (high resolution inspection mode) to cope with aggressively OPCed mask patterns including SRAFs, is the utilization of small pixel size inspection. In fact the sensitivity is increased by using smaller pixel size for the high resolution inspection, but at the same time the throughput of the defect inspection tool falls. In this paper, we propose that one of the solutions to improve inspection throughput is pixel migration. KLA-Tencor's TeraScan[1] XR improves SNR (Signal to Noise Ratio) for higher sensitivity as comparison with TeraScanHR, so that pixel migration is possible. For tool performance confirmation, TeraScanXR has improved in defect sensitivity and SRAF MRC (Mask Rule Check) limitation as comparison with TeraScanHR. We confirmed that pixel migration is one of the solutions to control inspection time growth of next generation mask. For printability simulation of pixel migration, we confirmed the possibility of Brion's Mask-LMC[2] (Mask-Lithography Manufacturability Check) defect classification by lower SNR image. For experiment to achieve higher sensitivity, we confirmed defect sensitivity improvement with experimental condition and considered the model to achieve higher sensitivity.

Citation Download Citation

Hidemichi Imai, Takeshi Kosuge, Kei Mesuda, Eiji Tsujimoto, and Hideyoshi Takamizawa "Productivity improvement of high resolution inspection mode on TeraScan 597XR", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77480Q (26 May 2010); https://doi.org/10.1117/12.867983

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available