Optical bistability in electrically coupled SOA-BJT devices

Pablo A. Costanzo-Caso; Yiye Jin; Michael Gehl; Sergio Granieri; Azad Siahmakoun

doi:10.1117/12.871552

14 September 2010 Optical bistability in electrically coupled SOA-BJT devices

Pablo A. Costanzo-Caso, Yiye Jin, Michael Gehl, Sergio Granieri, Azad Siahmakoun

Proceedings Volume 7750, Photonics North 2010; 77501Q (2010) https://doi.org/10.1117/12.871552
Event: Photonics North 2010, 2010, Niagara Falls, Canada

Abstract

A novel optical bistable device based on an electrically coupled semiconductor optical amplifier (SOA) and a bipolar juncture transistor (BJT) is proposed and experimentally demonstrated. The measured switching time is about 0.9-1.0 us, mainly limited by the electrical capacitance of the SOA and the parasitic inductance of the electrical connections. However, the effects of parasitic components can be reduced employing current electronic-photonic integration circuits (EPIC). Numerical simulations confirm that for capacitance values in tens of femtofarads switching speed can reach tens of GHz.

Citation Download Citation

Pablo A. Costanzo-Caso, Yiye Jin, Michael Gehl, Sergio Granieri, and Azad Siahmakoun "Optical bistability in electrically coupled SOA-BJT devices", Proc. SPIE 7750, Photonics North 2010, 77501Q (14 September 2010); https://doi.org/10.1117/12.871552

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