Bending tests of carbon nanotube thin-film transistors on flexible substrate

Daniel Pham; Harish Subbaraman; Maggie Yihong Chen; Xiaochuan Xu; Ray T. Chen

doi:10.1117/12.864066

24 August 2010 Bending tests of carbon nanotube thin-film transistors on flexible substrate

Daniel Pham, Harish Subbaraman, Maggie Yihong Chen, Xiaochuan Xu, Ray T. Chen

Proceedings Volume 7761, Carbon Nanotubes, Graphene, and Associated Devices III; 77610R (2010) https://doi.org/10.1117/12.864066
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

Bending tests of carbon nanotube thin-film transistors on flexible substrate have been characterized in this paper. The device channel consisting of dense, aligned, 99% pure semiconducting single-walled carbon nanotubes (SWCNT) are deposited using dip-coat technique on sacrificial substrate and then transferred on to the device substrate. Ink-jet printing technique is used to form the source, drain and gate electrodes using silver ink. A novel source-drain contact formation using wet droplet of silver ink prior to CNT thin-film application has been developed to enhance source-drain contact with the CNT channel. Bending test data on CNT-TFT test structures show minimal change (less than 10%) in their performance. To reduce the device performance variation due to bending, flexible electronic circuit is designed such that vertical device orientation is used for backward bending and horizontal orientation is used for forward bending.

Citation Download Citation

Daniel Pham, Harish Subbaraman, Maggie Yihong Chen, Xiaochuan Xu, and Ray T. Chen "Bending tests of carbon nanotube thin-film transistors on flexible substrate", Proc. SPIE 7761, Carbon Nanotubes, Graphene, and Associated Devices III, 77610R (24 August 2010); https://doi.org/10.1117/12.864066

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