Design and fabrication of uni-traveling-carrier InGaAs photodiodes

H. Yang; C. L. L. M. Daunt; F. Gity; K. Lee; W. Han; K. Thomas; B. Corbett; F. H. Peters

doi:10.1117/12.870522

11 October 2010 Design and fabrication of uni-traveling-carrier InGaAs photodiodes

H. Yang, C. L. L. M. Daunt, F. Gity, K. Lee, W. Han, K. Thomas, B. Corbett, F. H. Peters

Proceedings Volume 7847, Optoelectronic Devices and Integration III; 784705 (2010) https://doi.org/10.1117/12.870522
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

Photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present the design and fabrication of traveling-wave edge-coupled Unitraveling Carrier (UTC) PD. The fabricated UTC PD with 40μm×5μm waveguide shows 3dB bandwidth 13GHZ and 32GHz under 0 biases and -1V respectively. In parallel, PIN PD was also fabricated for comparison and only shows 4GHz and 18GHz under same bias conditions. This indicates the UTC PD is superior to the PIN PD for higher speed operation, especially in application of system without power supply.

Citation Download Citation

H. Yang, C. L. L. M. Daunt, F. Gity, K. Lee, W. Han, K. Thomas, B. Corbett, and F. H. Peters "Design and fabrication of uni-traveling-carrier InGaAs photodiodes", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 784705 (11 October 2010); https://doi.org/10.1117/12.870522

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