The cryogenic readout system with GaAs JFETs for multi-pixel cameras

Y. Hibi; H. Matsuo; H. Nagata; H. Ikeda; M. Fujiwara

doi:10.1117/12.870726

4 November 2010 The cryogenic readout system with GaAs JFETs for multi-pixel cameras

Y. Hibi, H. Matsuo, H. Nagata, H. Ikeda, M. Fujiwara

Proceedings Volume 7854, Infrared, Millimeter Wave, and Terahertz Technologies; 78541Z (2010) https://doi.org/10.1117/12.870726
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

Our purpose is to realize a multi-pixel sub-millimeter/terahertz camera with the superconductor - insulator - superconductor photon detectors. These detectors must be cooled below 1 K. Since these detectors have high impedance, signal amplifiers of each pixel must be setting aside of them for precise signal readout. Therefore, it is desirable that the readout system work well even in cryogenic temperature. We selected the n-type GaAs JFETs as cryogenic circuit elements. From our previous studies, the n-type GaAs JFETs have good cryogenic properties even when those power dissipations are low. We have designed several kinds of integration circuits (ICs) and demonstrated their performance at cryogenic temperature. Contents of ICs are following; AC coupled trans-impedance amplifiers, voltage distributors for suppressing input offset voltage of AC coupled CTIAs, multiplexers with sample-and holds, and shift-registers for controlling multiplex timing. The power dissipation of each circuit is 0.5 to 3 micro watts per channel. We also have designed and manufactured 32-channel multi-chip-modules with these ICs. These modules can make 32- channel input photo current signals into one or two serial output voltage signal(s). Size of these is 40mm x 30mm x 2mm and estimated total power dissipation is around 400 micro watts.

Citation Download Citation

Y. Hibi, H. Matsuo, H. Nagata, H. Ikeda, and M. Fujiwara "The cryogenic readout system with GaAs JFETs for multi-pixel cameras", Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 78541Z (4 November 2010); https://doi.org/10.1117/12.870726

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