Detailed characterisation of a new large area CCD manufactured on high resistivity silicon

Mark S. Robbins; Pritesh Mistry; Paul R. Jorden

doi:10.1117/12.876627

16 February 2011 Detailed characterisation of a new large area CCD manufactured on high resistivity silicon

Mark S. Robbins, Pritesh Mistry, Paul R. Jorden

Proceedings Volume 7875, Sensors, Cameras, and Systems for Industrial, Scientific, and Consumer Applications XII; 787507 (2011) https://doi.org/10.1117/12.876627
Event: IS&T/SPIE Electronic Imaging, 2011, San Francisco Airport, California, United States

Abstract

e2v technologies has developed "Hi-Rho" devices manufactured on very high resistivity silicon. Special design features have been included that enable extremely high gate to substrate potentials to be applied without significant current leakage between back and front substrate connections. The approach taken allows the usual design rules for low noise output amplifier circuitry to be followed. Thus low noise devices very sensitive to red and near infrared wavelengths can be manufactured. This paper reports on the detailed characterisation of the large format "Hi-Rho" sensor designed for astronomical applications and extends the data previously reported to include detailed assessment of the CTE, spatial resolution, dark signal and cosmetic quality. The influence of the base material has also been investigated with devices manufactured on silicon from two different manufacturers. Measurements of the quantum efficiency from devices utilising a newly developed antireflection coating process are presented.

Citation Download Citation

Mark S. Robbins, Pritesh Mistry, and Paul R. Jorden "Detailed characterisation of a new large area CCD manufactured on high resistivity silicon", Proc. SPIE 7875, Sensors, Cameras, and Systems for Industrial, Scientific, and Consumer Applications XII, 787507 (16 February 2011); https://doi.org/10.1117/12.876627

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