Piezomodulated Electronic Spectra Of Semiconductor Heterostructures: Gaas/Alxgal_Xas Quantum Well Structures

Y. R. Lee; A. K. Ramdas; F. A. Chambers; J. M. Meese; L. R. Ram Mohan

doi:10.1117/12.940899

22 April 1987 Piezomodulated Electronic Spectra Of Semiconductor Heterostructures: Gaas/Al_xga_{l_X}as Quantum Well Structures

Y. R. Lee, A. K. Ramdas, F. A. Chambers, J. M. Meese, L. R. Ram Mohan

Author Affiliations +

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940899
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

When heterostructures of semiconductors are subjected to an alternating strain, the piezomodulated optical properties, as in the bulk, display signatures characteristic of electronic transitions. We have applied the piezomodulation technique to the electronic transitions associated with GaAs/Al_xGa_{i_x}As quantum well structures. Our results obtained at temperatures down to that of liquid helium with single-, double-, and multiple-quantum wells reveal electronic transitions in the wells, the barriers and the buffer layer with exceptional clarity. The effects of coupling in the double and multiple quantum wells are clearly identified. Relative advantages and limitations of the piezomodulation and the now well-established photomodulation techniques'are discussed on the basis of experimental results on identical samples under comparable experimental conditions.

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Y. R. Lee, A. K. Ramdas, F. A. Chambers, J. M. Meese, and L. R. Ram Mohan "Piezomodulated Electronic Spectra Of Semiconductor Heterostructures: Gaas/Al_xga_{l_X}as Quantum Well Structures", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940899

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