Dense lying GaSb quantum dots on GaAs by Stranski-Krastanov growth

Thomas Henning Loeber; Dirk Hoffmann; Henning Fouckhardt

doi:10.1117/12.873537

1 March 2011 Dense lying GaSb quantum dots on GaAs by Stranski-Krastanov growth

Thomas Henning Loeber, Dirk Hoffmann, Henning Fouckhardt

Proceedings Volume 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII; 79470N (2011) https://doi.org/10.1117/12.873537
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

GaSb quantum dots (QDs) have been grown epitaxially on GaAs in the Stranski-Krastanov (SK) mode. By variation of the Sb/Ga-V/III flux ratio, the growth temperature, and the nominal coverage the QD dimensions and optoelectronic characteristics can be tuned. These modifications enable dense lying dots with a density up to 9.8 x 10¹⁰ cm^-2. The position of the photoluminescence (PL) peak can be varied between 0.850 and 1.378 μm by precise control of growth parameters. To raise the PL intensity and QD laser output power samples with a stack of GaSb QD layers are grown on GaAs wafer. A GaSb-QD-laser with a 8-fold stack and an emission wavelength around 0.900 μm is realized with a differential quantum efficiency of 54%.

Citation Download Citation

Thomas Henning Loeber, Dirk Hoffmann, and Henning Fouckhardt "Dense lying GaSb quantum dots on GaAs by Stranski-Krastanov growth", Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470N (1 March 2011); https://doi.org/10.1117/12.873537

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