Properties of implanted and CVD incorporated nitrogen-vacancy centers: preferential charge state and preferential orientation

K.-M. C. Fu; C. Santori; P. E. Barclay; A. Faraon; D. J. Twitchen; M. L. Markham; R. G. Beausoleil

doi:10.1117/12.876169

12 February 2011 Properties of implanted and CVD incorporated nitrogen-vacancy centers: preferential charge state and preferential orientation

K.-M. C. Fu, C. Santori, P. E. Barclay, A. Faraon, D. J. Twitchen, M. L. Markham, R. G. Beausoleil

Author Affiliations +

Proceedings Volume 7948, Advances in Photonics of Quantum Computing, Memory, and Communication IV; 79480S (2011) https://doi.org/10.1117/12.876169
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

The combination of the long electron state spin coherence time and the optical coupling of the ground electronic states to an excited state manifold makes the nitrogen-vacancy (NV) center in diamond an attractive candidate for quantum information processing. To date the best spin and optical properties have been found in centers deep within the diamond crystal. For useful devices it will be necessary to engineer NVs with similar properties close to the diamond surface. We report on properties including charge state control and preferential orientation for near surface NVs formed either in CVD growth or through implantation and annealing.

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K.-M. C. Fu, C. Santori, P. E. Barclay, A. Faraon, D. J. Twitchen, M. L. Markham, and R. G. Beausoleil "Properties of implanted and CVD incorporated nitrogen-vacancy centers: preferential charge state and preferential orientation", Proc. SPIE 7948, Advances in Photonics of Quantum Computing, Memory, and Communication IV, 79480S (12 February 2011); https://doi.org/10.1117/12.876169

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