Near-infrared induced negative photoconductance and its relationship with optical quenching of mid-infrared quantum cascade lasers

Dingkai Guo; Fow-Sen Choa; Liwei Cheng; Xing Chen

doi:10.1117/12.875910

16 February 2011 Near-infrared induced negative photoconductance and its relationship with optical quenching of mid-infrared quantum cascade lasers

Dingkai Guo, Fow-Sen Choa, Liwei Cheng, Xing Chen

Author Affiliations +

Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79531S (2011) https://doi.org/10.1117/12.875910
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We report in this work the near-Infrared (IR) induced negative photoconductance (NPC) on mid-IR Quantum Cascade Lasers (QCLs) and its relationship with the quenching of QCL. The NPC behaviour depends on the coupled near-IR intensity, wavelength and the QCL bias voltage amplitude. If the QCL is under pulse operations, it depends on the pulse width as well. From our interpretation, the NPC is related to electron-hole pair generation and hole-trapping, which produces an internal field counteracting to the external field. The created band-bending effect will reduce the current, increase the resistance, and reduce the mid-IR light output, which has been reported earlier as the "optical quenching effect." We observed that only a near-IR laser with good quenching ability can modulate the mid-IR laser. Since the modulation speed exceeds more than 100 MHz, this excludes the possibility of a thermal origin of these results. The near-IR induced optical quenching effect has the potential to provide all optical modulation of mid-IR QCLs.

Citation Download Citation

Dingkai Guo, Fow-Sen Choa, Liwei Cheng, and Xing Chen "Near-infrared induced negative photoconductance and its relationship with optical quenching of mid-infrared quantum cascade lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531S (16 February 2011); https://doi.org/10.1117/12.875910

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