RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces

P. Chen; T. C. Lee; N. M. Cho; A. Madhukar

doi:10.1117/12.941010

20 April 1987 RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces

P. Chen, T. C. Lee, N. M. Cho, A. Madhukar

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941010
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Reflection high-energy electron diffraction (RHEED) intensity dynamics has been widely accepted as a sensitive, in-situ, real time monitor of the surface morphology during the molecular beam epitaxial (MBE) growth. In this paper we focus on the behavior of the specular beam intensity as a function of the growth conditions (substrate temperature, arsenic pressure and growth rate) as well as diffraction conditions (incident angle of the electron beam, azimuthal angle) for both static (i.e., no growth) and dynamic (i.e., during growth) AlxGa1-xAs (100) (0 < x <1) surfaces. The kinetic processes underlying these observations are discussed.

Citation Download Citation

P. Chen, T. C. Lee, N. M. Cho, and A. Madhukar "RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941010

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