Shadowing effect modeling and compensation for EUV lithography

Hua Song; Lena Zavyalova; Irene Su; James Shiely; Thomas Schmoeller

doi:10.1117/12.881713

8 April 2011 Shadowing effect modeling and compensation for EUV lithography

Hua Song, Lena Zavyalova, Irene Su, James Shiely, Thomas Schmoeller

Author Affiliations +

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79691O (2011) https://doi.org/10.1117/12.881713
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) lithography is one of the leading technologies for 16nm and smaller node device patterning. One patterning issue intrinsic to EUV lithography is the shadowing effect due to oblique illumination at the mask and mask absorber thickness. This effect can cause CD errors up to a few nanometers, consequently needs to be accounted for in OPC modeling and compensated accordingly in mask synthesis. Because of the dependence on the reticle field coordinates, shadowing effect is very different from the traditional optical and resist effects. It poses challenges to modeling, compensation, and verification that were not encountered in tradition optical lithography mask synthesis. In this paper, we present a systematic approach for shadowing effect modeling and model-based shadowing compensation. Edge based shadowing effect calculation with reticle and scan information is presented. Model calibration and mask synthesis flows are described. Numerical experiments are performed to demonstrate the effectiveness of the approach.

Citation Download Citation

Hua Song, Lena Zavyalova, Irene Su, James Shiely, and Thomas Schmoeller "Shadowing effect modeling and compensation for EUV lithography", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691O (8 April 2011); https://doi.org/10.1117/12.881713

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