eMET: 50 keV electron multibeam mask exposure tool

Christof Klein; Jan Klikovits; Hans Loeschner; Elmar Platzgummer

doi:10.1117/12.879419

2 April 2011 eMET: 50 keV electron multibeam mask exposure tool

Christof Klein, Jan Klikovits, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7970, Alternative Lithographic Technologies III; 79700C (2011) https://doi.org/10.1117/12.879419
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Basic concept and targeted throughput values for IMS Nanofabrication's 50keV electron multibeam Mask Exposure Tool called eMET are outlined and detailed specifications of an eMET Proof-of-Concept Tool are presented. Recent results as obtained with electron and ion multi-beam projection test systems are described and compared with exposure simulations. Exposures were concentrated on ILT as well as OPC test patterns. Good agreement between test system exposures and simulation results is shown proving the accuracy of the theoretical predictions. Aerial image simulations for eMET demonstrate its capability to fully resolve complex patterns down to the 8 nm mask technology node.

Citation Download Citation

Christof Klein, Jan Klikovits, Hans Loeschner, and Elmar Platzgummer "eMET: 50 keV electron multibeam mask exposure tool", Proc. SPIE 7970, Alternative Lithographic Technologies III, 79700C (2 April 2011); https://doi.org/10.1117/12.879419

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