Reduction of micro-bridging defects for 193nm immersion resist

Lijing Gou; Vinay Nair; Hiroyuki Mori; Adam Olson; David Swindler; Anton Devilliers

doi:10.1117/12.881546

15 April 2011 Reduction of micro-bridging defects for 193nm immersion resist

Lijing Gou, Vinay Nair, Hiroyuki Mori, Adam Olson, David Swindler, Anton Devilliers

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79721P (2011) https://doi.org/10.1117/12.881546
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Factors such as post-develop hydrophobicity, polymer aggregation and acid diffusion length are driving forces in the formation of micro bridging defects. In this report, solutions for each possible cause are proposed and tested. It is proven that micro-bridging levels can be significantly reduced through a multi-tiered approach.

Citation Download Citation

Lijing Gou, Vinay Nair, Hiroyuki Mori, Adam Olson, David Swindler, and Anton Devilliers "Reduction of micro-bridging defects for 193nm immersion resist", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721P (15 April 2011); https://doi.org/10.1117/12.881546

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available