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We report the preparation and investigation of heterostructures based on ferroelectric crystals and semiconductor films.
The ferroelectric field effect transistor with high transparency for visible light and high field mobility of the charge
carriers has been fabricated using ZnO:Li films as a transistor channel. The possibility of use of ferroelectric field effect
transistor based on ZnO:Li films as bistable element for information writing has been shown.
Natella R. Aghamalyan,Ruben K. Hovsepyan,Evgenia A. Kafadaryan,Silva I. Petrosyan,Armen R. Poghosyan, andEduard S. Vardanyan
"Memory elements based on thin film field-effect transistor", Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980A (4 March 2011); https://doi.org/10.1117/12.891259
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Natella R. Aghamalyan, Ruben K. Hovsepyan, Evgenia A. Kafadaryan, Silva I. Petrosyan, Armen R. Poghosyan, Eduard S. Vardanyan, "Memory elements based on thin film field-effect transistor," Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980A (4 March 2011); https://doi.org/10.1117/12.891259