Proposal For A Low Threshold Current Long Wavelength Strained Layer Laser

K. C. Heasman; E. P. O'Reilly; G. P. Witchlow; W. Batty; A. R. Adams

doi:10.1117/12.941185

22 September 1987 Proposal For A Low Threshold Current Long Wavelength Strained Layer Laser

K. C. Heasman, E. P. O'Reilly, G. P. Witchlow, W. Batty, A. R. Adams

Proceedings Volume 0800, Novel Optoelectronic Devices; (1987) https://doi.org/10.1117/12.941185
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

We illustrate the benefits of strained layer structures for long wavelength lasers by considering a laser with 35Å InAs wells in GaAs. The lasing wavelength is close to 1.55μm. The built-in strain ensures that the highest hole band has a low effective mass over more than 3kT at room temperature, with the zone centre hole mass mh = .112. The reduced effective mass leads to the virtual elimination of the two major loss mechanisms in 1.55μm lasers, namely intervalence band absorption and Auger recombination. A threshold current density of Jth = 150 A cm-2 and a To of 120K can be achieved in a separate confinement laser with 3 wells. We conclude that a low threshold current, high efficiency, high To laser can be achieved in a suitable strained layer structure.

Citation Download Citation

K. C. Heasman, E. P. O'Reilly, G. P. Witchlow, W. Batty, and A. R. Adams "Proposal For A Low Threshold Current Long Wavelength Strained Layer Laser", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); https://doi.org/10.1117/12.941185

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