Paper
20 May 2011 Analytic modeling and explanation of ultra-low noise in dense SWIR detector arrays
Author Affiliations +
Abstract
InGaAs-based focal plane arrays are an unrivaled uncooled SWIR technology. Prior analytical models of InGaAs have been inaccurate at predicting the ultimate dark current limits for tight-pitch arrays. By going back to first-principles, we have developed an improved analytic model. This model clarifies how tight pitch arrays suppress diffusion current and why bulk generation-recombination is not a limiting factor in today's devices. We can thus explain our experimental arrays with dark currents of 0.5nA/cm2 at 20C and <0.1nA/cm2 at 7C as well why we believe another order of magnitude decrease in dark current is theoretically possible.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John A. Trezza, Navneet Masaun, and Martin Ettenberg "Analytic modeling and explanation of ultra-low noise in dense SWIR detector arrays", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80121Y (20 May 2011); https://doi.org/10.1117/12.884118
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Cited by 12 scholarly publications.
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KEYWORDS
Diodes

Diffusion

Lawrencium

Doping

Indium gallium arsenide

Instrument modeling

Short wave infrared radiation

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