Paper
20 May 2011 High-operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice
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Abstract
Recent efforts have been paid to elevate the operating temperature of Type II superlattice Mid Infrared photon detectors. Using M-structure superlattice, novel device architectures have been developed, resulting in significant improvement of the device performances. In this paper, we will compare different photodetector architectures and discuss the optimization scheme which leads to almost one order of magnitude of improvement to the electrical performance. At 150K, single element detectors exhibit a quantum efficiency above 50%, and a specific detectivity of 1.05x1012 cm.Hz1/2/W. BLIP operation with a 300K background and 2π FOV can be reached with an operating temperature up to 180K. High quality focal plane arrays were demonstrated with a noise equivalent temperature difference (NEDT) of 11mK up to 120K. Human body imaging is achieved at 150K with NEDT of 150mK.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Siamak Abdollahi Pour, Edward Huang, Guanxi Chen, Abbas Haddadi, and Binh-Minh Nguyen "High-operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80122Q (20 May 2011); https://doi.org/10.1117/12.888060
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Cited by 9 scholarly publications.
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KEYWORDS
Photodiodes

Doping

Mid-IR

Superlattices

Indium arsenide

Quantum efficiency

Diffusion

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