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25 May 2011 InP and InGaAs Schottky-type terahertz emitter excited at a wavelength of 1560 nm
Masayoshi Tonouchi, Masato Suzuki, Kazunori Serita, Iwao Kawayama, Hironaru Murakami
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Abstract
We examine InP and InGaAs Schottky type photoconductive antenna for the THz generation excited by femtosecond laser(fs) at a wavelength of 1560nm. Since InP has an energy gap of 1.3 eV, which is much larger than photon energy of fs laser. We obtained THz wave generation from both PC antennas with sufficient THz amplitude, which is comparative to that of low temperature grown GaAs.We also developed new type of InGaAs PC antennas which includes insulating gap in a PC structure.Highly bright THz beam was generated from the InGaAs PC antennas.
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Masayoshi Tonouchi, Masato Suzuki, Kazunori Serita, Iwao Kawayama, and Hironaru Murakami "InP and InGaAs Schottky-type terahertz emitter excited at a wavelength of 1560 nm", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230L (25 May 2011); https://doi.org/10.1117/12.887938
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KEYWORDS
Terahertz radiation

Antennas

Indium gallium arsenide

Femtosecond phenomena

Fiber lasers

Sensors

Electrodes

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